Phase separation in annealed InGaN/GaN multiple quantum wells
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چکیده
In-rich second phases were detected by transmission electron microscopy (TEM) in In 0.27 Ga 0.73 N multiple quantum well (MQW) samples that were annealed at 950°C for 40 h. X-ray diffraction (XRD) measurements showed a shift in the zero-order diffraction peak toward GaN, consistent with the formation of an In-poor phase remaining in the InGaN wells. Voids were also found by TEM in the MQWs after annealing. ( 1998 Elsevier Science B.V. All rights reserved.
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تاریخ انتشار 1998